Image sensor employing avalanche diode and shared output circuit

ABSTRACT

There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits, a plurality of output circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and a P-type or N-type select switch transistor. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. Each of the plurality of output circuits is shared by at least two pixel circuits.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a continuation-in-part application of U.S.Ser. No. 16/872,626, filed on May 12, 2020, which is a divisionalapplication of U.S. Ser. No. 16/258,673, filed on Jan. 28, 2019, thedisclosures of which are hereby incorporated by reference herein intheir entirety.

BACKGROUND 1. Field of the Disclosure

This disclosure generally relates to the photon detection technologyand, more particularly, to an image sensor employing a single photonavalanche diode (SPAD) in the pixel circuit. The quenching and readoutcircuit of the SPAD has a low limitation on minimum pixel unit and ahigh fill factor.

2. Description of the Related Art

Single photon detection is a good choice in dealing with weak lightenvironment and high frequency light signals.

For example, a single photon avalanche diode (SPAD) can be used as adetector for weak light, and has the benefits of high avalanche gain,fast response and low power consumption. When each photon is received bythe SPAD, an avalanche current is triggered to respond that one photonis detected. A pulse generated by the avalanche current can be referredas an event.

However, the SPAD cannot accomplish the quenching by itself, and thus aquenching circuit is required in operation so as to quickly pull down abias voltage of the SPAD to be lower than a breakdown voltage after anavalanche occurs. Then, the bias voltage is quickly pulled up to behigher than the breakdown voltage to cause the SPAD to return to aphoton detecting state.

One requirement of the quenching circuit is not to decrease the fillfactor.

One conventional method is to form an independent 3D quenching circuitoutside a pixel circuit. Because the pixel circuit and the quenchingcircuit are not arranged in the same chip, the impact upon the fillfactor is reduced.

Another conventional method is to use a logic circuit having acombination of p-type and N-type transistors to implement a quenchingcircuit. However, in this kind of quenching circuit, two Nwells havingdifferent potentials have to be formed within a signal pixel unit. Dueto the design rules checking, a minimum distance should be maintainedbetween the Nwells having different potentials that causes a limitationon the minimum pixel size.

Accordingly, it is necessary to provide a quenching circuit of the SPADhaving a low limitation on minimum pixel unit and a high fill factor.

SUMMARY

The present disclosure provides an image sensor incorporating an SPADwithin each pixel circuit, and the SPAD has a low limitation on minimumpixel size and a high fill factor.

The present disclosure provides an image sensor employing a singlephoton avalanche diode. The image sensor includes a pixel array and aplurality of pulling circuits. The pixel array includes a plurality ofpixel circuits arranged in a matrix. Each column of the pixel array hasmultiple pixel circuit groups and each pixel circuit group includes afirst avalanche diode, a first switch transistor, a resistivetransistor, a pull down transistor, a second avalanche diode, a thirdswitch transistor and a second switch transistor. The avalanche diodehas an anode and a cathode, and the cathode thereof is connected to apositive bias voltage. A drain of the first switch transistor isconnected to the anode of the first avalanche diode, a gate of the firstswitch transistor is configured to receive a first exposure signal, anda source of the first switch transistor is connected to a node. A drainof the resistive transistor is connected to the node, a gate of theresistive transistor is configured to receive a fixed voltage signal,and a source of the resistive transistor is connected to a groundvoltage. A gate of the pull down transistor is connected to the node,and a source of the pull down transistor is connected to the groundvoltage. The second avalanche diode has an anode and a cathode, and thecathode thereof is connected to the positive bias voltage. A drain ofthe third switch transistor is connected to the anode of the secondavalanche diode, a gate of the third switch transistor is configured toreceive a second exposure signal, and a source of the third switchtransistor is connected to the node. A gate of the second switchtransistor is configured to receive the first exposure signal or thesecond exposure signal, a source of the second switch transistor isconnected to a drain of the pull down transistor, and a drain of thesecond switch transistor is configured to generate a first outputvoltage or a second output voltage. Each of the plurality of pullingcircuits is configured to be coupled to the drain of the second switchtransistor of each pixel circuit group of one column of pixel circuitgroups via a readout line to read the first output voltage or the secondoutput voltage.

The present disclosure further provides an image sensor employing asingle photon avalanche diode. The image sensor includes a pixel array,a plurality of output circuits and a plurality of pulling circuits. Thepixel array includes a plurality of pixel circuits arranged in a matrix.Each of the pixel circuits includes an avalanche diode and a selectswitch transistor. The avalanche diode has an anode and a cathode, andthe cathode thereof is connected to a positive bias voltage. A drain ofthe select switch transistor is connected to the anode of the avalanchediode, a gate of the select switch transistor is configured to receivean exposure signal, and a source of the select switch transistor isconnected to a node via a readout line. Each of the plurality of outputcircuits is configured to be coupled to one pixel circuit columnrespectively via the readout line, and includes a resistive transistor,a pull down transistor and a second switch transistor. A drain of theresistive transistor is connected to the node, a gate of the resistivetransistor is configured to receive a fixed voltage signal, and a sourceof the resistive transistor is connected to a ground voltage. A gate ofthe pull down transistor is connected to the node, and a source of thepull down transistor is connected to the ground voltage. A gate of thesecond switch transistor is configured to receive the exposure signal, asource of the second switch transistor is connected to a drain of thepull down transistor, and a drain of the second switch transistor isconfigured to generate an output voltage. Each of the plurality ofpulling circuits is configured to be coupled to the drain of the secondswitch transistor of one of the plurality of output circuits to read theoutput voltage.

The present disclosure further provides an image sensor employing asingle photon avalanche diode. The image sensor includes a pixel arrayand a plurality of pulling circuits. The pixel array includes aplurality of pixel circuits arranged in a matrix. Each column of thepixel array includes multiple pixel circuit groups and each pixelcircuit group includes a first avalanche diode, a first switchtransistor, a resistive transistor, a pull up transistor, a secondavalanche diode, a third switch transistor and a second switchtransistor. The avalanche diode has an anode and a cathode, and theanode thereof is connected to a negative bias voltage. A drain of thefirst switch transistor is connected to the cathode of the firstavalanche diode, a gate of the first switch transistor is configured toreceive a first exposure signal, and a source of the first switchtransistor is connected to a node. A drain of the resistive transistoris connected to the node, and a gate of the resistive transistor isconfigured to receive a fixed voltage signal, and a source of theresistive transistor is connected to a system voltage. A gate of thepull up transistor is connected to the node, and a source of the pull uptransistor is connected to the system voltage. The second avalanchediode has an anode and a cathode, and the anode thereof is connected tothe negative bias voltage. A drain of the third switch transistor isconnected to the cathode of the second avalanche diode, a gate of thethird switch transistor is configured to receive a second exposuresignal, and a source of the third switch transistor is connected to thenode. A gate of the second switch transistor is configured to receivethe first exposure signal or the second exposure signal, a source of thesecond switch transistor is connected to a drain of the pull uptransistor, and a drain of the second switch transistor is configured togenerate a first output voltage or a second output voltage. Each of theplurality of pulling circuits is configured to be coupled to the drainof the second switch transistor of each pixel circuit group of onecolumn of pixel circuit groups via a readout line to read the firstoutput voltage or the second output voltage.

The present disclosure further provides an image sensor employing asingle photon avalanche diode. The image sensor includes a pixel array,a plurality of output circuits and a plurality of pulling circuits. Thepixel array includes a plurality of pixel circuits arranged in a matrix.Each of the pixel circuits includes an avalanche diode and a selectswitch transistor. The avalanche diode has an anode and a cathode, andthe anode thereof is connected to a negative bias voltage. A drain ofthe select switch transistor is connected to the cathode of theavalanche diode, a gate of the select switch transistor is configured toreceive an exposure signal, and a source of the select switch transistoris connected to a node via a readout line. Each of the plurality ofoutput circuits is configured to be coupled to one pixel circuit columnrespectively via the readout line, and includes a resistive transistor,a pull up transistor and a second switch transistor. A drain of theresistive transistor is connected to the node, and a gate of theresistive transistor is configured to receive a fixed voltage signal,and a source of the resistive transistor is connected to a systemvoltage. A gate of the pull up transistor is connected to the node, anda source of the pull up transistor is connected to the system voltage. Agate of the second switch transistor is configured to receive theexposure signal, a source of the second switch transistor is connectedto a drain of the pull up transistor, and a drain of the second switchtransistor is configured to generate an output voltage. Each of theplurality of pulling circuits is configured to be coupled to the drainof the second switch transistor of one of the plurality of outputcircuits to read the output voltage.

In the quenching and readout circuit of the SPAD of the presentdisclosure, each pixel only has N-type transistors or P-typetransistors, and thus each pixel only has one Nwell.

In the image sensor of the present disclosure, as the pulling circuit isarranged outside of each pixel, it can neither become a limitation onthe minimum pixel unit nor affect the fill factor.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects, advantages, and novel features of the present disclosurewill become more apparent from the following detailed description whentaken in conjunction with the accompanying drawings.

FIG. 1 is a schematic diagram of an image sensor according to a firstembodiment of the present disclosure.

FIG. 2 is an operational timing diagram of an image sensor according toa first embodiment of the present disclosure.

FIG. 3 is a flow chart of an image sensor according to a firstembodiment of the present disclosure.

FIG. 4 is a schematic diagram of an image sensor according to a secondembodiment of the present disclosure.

FIG. 5 is an operational timing diagram of an image sensor according toa second embodiment of the present disclosure.

FIG. 6 is a flow chart of an image sensor according to a secondembodiment of the present disclosure.

FIG. 7 is a schematic diagram of an image sensor according to a thirdembodiment of the present disclosure.

FIG. 8 is an operational timing diagram of an image sensor according toa third embodiment of the present disclosure.

FIG. 9 is a schematic diagram of an image sensor according to a fourthembodiment of the present disclosure.

FIG. 10 is a schematic diagram of an image sensor according to a fifthembodiment of the present disclosure.

FIG. 11 is a schematic diagram of an image sensor according to a sixthembodiment of the present disclosure.

FIG. 12 is a schematic diagram of an image sensor according to a seventhembodiment of the present disclosure.

DETAILED DESCRIPTION OF THE EMBODIMENT

It should be noted that, wherever possible, the same reference numberswill be used throughout the drawings to refer to the same or like parts.

Referring to FIG. 1, it is a schematic diagram of an image sensor 100according to a first embodiment of the present disclosure. The imagesensor 100 is used to detect extremely weak light and high frequencysignals, and thus a single photon avalanche diode (SPAD) is employed todetect photon events. A processor generates an image frame by countingphoton events of every pixel to perform the object tracking, gesturerecognition, 3D image construction, and biological feature detection andrecognition.

The image sensor 100 includes a pixel array 11, a plurality of pullingcircuits 12, a plurality of counters 13, a row decoder 14, a columndecoder 15 and a global current source circuit 16, wherein the rowdecoder 14 and the column decoder 15 are used to determine a pixelposition in the pixel array 11 that is being exposed and outputting adetected signal (e.g., pulses mentioned below). The operation of the rowdecoder 14 and the column decoder 15 is known to the art and is not amain objective of the present disclosure, and thus details thereof arenot described herein.

The pixel array 11 includes a plurality of pixel circuits 111 (e.g.,FIG. 1 showing 16×16 pixels as an example) arranged in a matrix. Each ofthe plurality of pixel circuits 111 has an avalanche diode SPAD and fourN-type transistors including a resistive transistor NM1, a first switchtransistor NM0, a pull down transistor NM3 and a second switchtransistor NM2.

The avalanche diode SPAD is a single photon avalanche diode, and has ananode and a cathode. The cathode is connected to a positive bias voltageVA, e.g., +15V, but not limited to. The anode is connected to a node SN.When a voltage difference (or bias) between the cathode and the anodeexceeds a breakdown voltage of the avalanche diode SPAD, an avalanchecurrent Ia is generated. In the first embodiment, the resistivetransistor NM1 and the first switch transistor NM0 of the pixel circuit111 are used to form a quenching circuit, which causes the voltagedifference between the cathode and the anode to be lower than thebreakdown voltage for quenching when the avalanche diode SPAD generatesthe avalanche current Ia. The pull down transistor NM3 and the secondswitch transistor NM2 of the pixel circuit 111 are used to form areadout circuit, which reads an output voltage of the pixel circuit 111to a corresponding column counter 13.

A drain of the resistive transistor NM1 is connected to the node SN toconnect to the anode of the avalanche diode SPAD. A gate of theresistive transistor NM1 is used to receive a fixed voltage signal VQand be turned on or off thereby. In the first embodiment, the resistivetransistor NM1 is used to form a controllable resistor, and resistanceof the controllable resistor is determined according to a voltage valueof the fixed voltage signal VQ. When the avalanche diode SPAD receives aphoton in the detecting state and the first switch transistor NM0 isconducted, a voltage drop is formed on the resistive transistor NM1 tocause the voltage difference between the cathode and the anode of theavalanche diode SPAD to be lower than the breakdown voltage for thequenching.

A drain of the first switch transistor NM0 is connected to a source ofthe resistive transistor NM1. A gate of the first switch transistor NM0is used to receive an exposure signal RS, which is a row selectionsignal and, for example, generated by the row decoder 14. A source ofthe first switch transistor NM0 is connected to a ground voltage.

A gate of the pull down transistor NM3 is connected to the node SN toconnect to the anode of the avalanche diode SPAD. A source of the pulldown transistor NM3 is connected to the ground voltage. The pull downtransistor NM3 is used as a discharging path of a voltage on the nodeSN, and a discharging speed is determined according to resistance of theresistive transistor NM1 and stray capacitance of the circuit. Theresistance and the stray capacitance are values determined in circuitmanufacturing.

A gate of the second switch transistor NM2 also receives the exposuresignal RS, and controlled by the exposure signal RS to be turned on oroff together with the first switch transistor NM0. A source of thesecond switch transistor NM2 is connected to a drain of the pull downtransistor NM3. A drain of the second switch transistor NM2 is used togenerate an output voltage of the associated pixel circuit 111.

Each of the plurality of pulling circuits 12 is used to connect to thedrain of the second switch transistor NM2 of each pixel circuit 111 inone pixel circuit column via a readout line Rd for reading the outputvoltage. For example, the image sensor 100 further includes amultiplexer or multiple switching devices to allow the pulling circuit12 corresponding to each pixel circuit column to be connected todifferent pixel circuits 111 via the multiplexer of different switchingdevices. In the first embodiment, each of the pulling circuits 12includes a P-type transistor PM0 used to pull up the output voltageafter reading out a pulse in the output voltage (illustrated by anexample below). A drain of the P-type transistor PM0 is connected to thedrain of the second switch transistor NM2. A source of the P-typetransistor PM0 is connected to a system voltage VDD, which is identicalto or different from the positive bias voltage VA. A gate of the P-typetransistor PM0 is used to receive a control signal VB.

The global current source circuit 16 is used to form a current mirrorwith each of the plurality of pulling circuits 12. The image sensor 100is arranged with only one global current source circuit 16. For example,the image sensor 100 further includes a multiplexer or multipleswitching devices to allow the global current source circuit 16 to becoupled to different pulling circuits 12 via the multiplexer ordifferent switching devices. The global current source circuit 16includes a P-type transistor whose drain and gate are connected togetherand connected to a global current source. A source of the P-typetransistor is connected to the system voltage VDD.

Each of the plurality of counters 13 is coupled to one pixel circuitcolumn for counting photon events in the output voltage from each pixelcircuit 111 of the coupled pixel circuit column.

Referring to FIGS. 2 and 3, FIG. 2 is an operational timing diagram ofan image sensor 100 according to a first embodiment of the presentdisclosure; and FIG. 3 is a flow chart of an image sensor 100 accordingto a first embodiment of the present disclosure. The operating method ofthe image sensor 100 includes: turning on a resistive transistor by afixed voltage signal at a first time (Step S31); turning on a firstswitch transistor and a second switch transistor by an exposure signalat a second time to cause an avalanche diode to enter a detecting state(Step S33); and turning on a pull down transistor by an avalanchecurrent generated by the avalanche diode when receiving a photon togenerate a negative pulse on a drain of the second switch transistor asa photon event of an output voltage (Step S35).

Referring to FIGS. 1 to 3 together, details of this operating method areillustrated below. Although this operating method illustrates theoperation of one pixel circuit 111, it is appreciated that every pixelcircuit 111 in the same pixel circuit column has an operation identicalto FIGS. 2 and 3 only occurring at a different time based on the rowselection signal.

Step S31: At a first time t1, the fixed voltage signal VQ is switched toa high voltage level to turn on the resistive transistor NM1 of a pixelcircuit 111. Meanwhile, as the first switch transistor NM0 is not turnedon yet, a voltage drop is not generated on the resistive transistor NM1.At the first time t1, the control signal VB is switched to a low voltagelevel to turn on the P-type transistor of the pulling circuit 12 (nowthe pulling circuit 12 being coupled to the corresponding pixel circuit111 via a switching device or multiplexer).

Step S33: At a second time t2, the exposure signal RS is switched to ahigh voltage level to turn on the first switch transistor NM0 and thesecond switch transistor NM2 together. In the first embodiment, a highlevel interval of the exposure signal RS is referred to an exposureperiod within which each photon event is counted by the column counter13. After the first switch transistor NM0 is conducted, as the resistivetransistor NM1 has been turned on at the first time t1, a voltage on thenode SN is pulled down to a low voltage level. In the first embodiment,the first time t1 is prior to the second time t2 by a predeterminedinterval as a setting interval of the resistive transistor NM1. Inaddition, during an interval between the second time t2 and the time t3,although the second switch transistor NM2 is conducted, the outputvoltage is still kept at a high voltage level because the pull downtransistor NM3 is not turned on yet.

Step S35: Within the exposure period, the SPAD is in the detecting statewhen the avalanche diode SPAD does not receive any photon (e.g., aninterval between t2 and t3 in FIG. 2), wherein the voltage on the nodeSN and the output voltage are respectively kept at a low voltage leveland a high voltage level. When the avalanche diode SPAD receives aphoton (e.g., at time t3 in FIG. 2), the avalanche diode SPAD generatesan avalanche current Ia flowing through the resistive transistor NM1 toform a voltage drop thereon to cause the voltage on the node SN tochange to a high voltage level to turn on the pull down transistor NM3.Meanwhile, the drain of the second switch transistor NM2 is connected tothe ground via the second switch transistor NM2 and the pull downtransistor NM3 to cause the output voltage to generate a negative pulseas a photon event of the output voltage. Meanwhile, as the voltage onthe node SN is changed to a high voltage level to cause the voltagedifference between the cathode and the anode of the avalanche diode SPADto be smaller than the breakdown voltage, the quenching is started.

Next, the voltage on the node SN starts to discharge at time t4 via thepull down transistor NM3, and the pull down transistor NM3 isautomatically turned off (e.g., at time t5 in FIG. 2) after a dischargeinterval, and the avalanche diode SPAD returns to a detecting state,wherein said discharge interval is determined according to theresistance of the resistive transistor NM1 and the stray capacitance ofthe circuit. As mentioned above, said resistance of the resistivetransistor NM1 and the stray capacitance are determined in a circuitdesign stage so as to determine a time interval of the avalanche diodeSPAD returning to the detecting state.

Finally, after the pull down transistor NM3 is automatically turned off,the pulling circuit 12 pulls up the output voltage back to a highvoltage level to return to an original level at time t6. In this way,one quenching and reading cycle is accomplished.

During an exposure period, corresponding to each incident photon, theoperation of the pixel circuit 111 repeats the process from the firsttime t1 to time t6 in FIG. 6. For example, the counter 13 counts fournegative pulses as the detection result within the exposure period inFIG. 2.

Referring to FIG. 4, it is a schematic diagram of an image sensor 400according to a second embodiment of the present disclosure. The imagesensor 400 is also used to detect extremely weak light and highfrequency signals, and thus a single photon avalanche diode (SPAD) isemployed to detect photon events. A processor generates an image frameby counting photon events of every pixel to perform the object tracking,gesture recognition, 3D image construction, and biological featuredetection and recognition.

The image sensor 400 includes a pixel array 41, a plurality of pullingcircuits 42, a plurality of counters 43, a row decoder 44, a columndecoder 45 and a global current source circuit 46, wherein the rowdecoder 44 and the column decoder 45 are also used to determine a pixelposition in the pixel array 41 that is being exposed and outputting adetected signal (e.g., pulses mentioned below).

The pixel array 41 includes a plurality of pixel circuits 411 (e.g.,FIG. 4 also showing 16×16 pixels as an example) arranged in a matrix.Each of the plurality of pixel circuits 411 has an avalanche diode SPADand four P-type transistors including a resistive transistor PM1, afirst switch transistor PM0, a pull up transistor PM3 and a secondswitch transistor PM2.

The avalanche diode SPAD is a single photon avalanche diode, and has ananode and a cathode. The anode is connected to a negative bias voltageVA, e.g., −15V, but not limited to. The cathode is connected to a nodeSN. When a voltage difference (or bias) between the cathode and theanode exceeds a breakdown voltage of the avalanche diode SPAD, anavalanche current Ia is generated. In the second embodiment, theresistive transistor PM1 and the first switch transistor PM0 of thepixel circuit 411 are used to form a quenching circuit, which causes thevoltage difference between the cathode and the anode to be lower thanthe breakdown voltage for quenching when the avalanche diode SPADgenerates the avalanche current Ia. The pull up transistor PM3 and thesecond switch transistor PM2 of the pixel circuit 411 are used to form areadout circuit, which reads an output voltage of the pixel circuit 411to a corresponding column counter 43.

A drain of the resistive transistor PM1 is connected to the node SN toconnect to the cathode of the avalanche diode SPAD. A gate of theresistive transistor PM1 is used to receive a fixed voltage signal VQand be turned on or off thereby. In the second embodiment, the resistivetransistor PM1 is used to form a controllable resistor, and resistanceof the controllable resistor is determined according to a voltage valueof the fixed voltage signal VQ. When the avalanche diode SPAD receives aphoton in the detecting state and the first switch transistor PM0 isconducted, a voltage drop is formed on the resistive transistor PM1 tocause the voltage difference between the cathode and the anode of theavalanche diode SPAD to be lower than the breakdown voltage for thequenching.

A drain of the first switch transistor PM0 is connected to a source ofthe resistive transistor PM1. A gate of the first switch transistor PM0is used to receive an exposure signal RS, which is a row selectionsignal and, for example, generated by the row decoder 44. A source ofthe first switch transistor PM0 is connected to a system voltage VDD.

A gate of the pull up transistor PM3 is connected to the node SN toconnect to the cathode of the avalanche diode SPAD. A source of the pullup transistor PM3 is connected to the system voltage VDD. The pull uptransistor PM3 is used as a charging path of a voltage on the node SN,and a charging speed is determined according to resistance of theresistive transistor PM1 and stray capacitance of the circuit. Theresistance and the stray capacitance are values determined in circuitmanufacturing.

A gate of the second switch transistor PM2 also receives the exposuresignal RS, and controlled by the exposure signal RS to be turned on oroff together with the first switch transistor PM0. A source of thesecond switch transistor PM2 is connected to a drain of the pull uptransistor PM3. A drain of the second switch transistor PM2 is used togenerate an output voltage of the associated pixel circuit 411.

Each of the plurality of pulling circuits 42 is used to connect to thedrain of the second switch transistor PM2 of each pixel circuit 411 inone pixel circuit column via a readout line Rd for reading the outputvoltage. For example, the image sensor 400 further includes amultiplexer or multiple switching devices to allow the pulling circuit42 corresponding to each pixel circuit column to be connected todifferent pixel circuits 411 via the multiplexer of different switchingdevices. In the second embodiment, each of the pulling circuits 42includes an N-type transistor NM0 used to pull down the output voltageafter reading out a pulse in the output voltage (illustrated by anexample below). A drain of the N-type transistor NM0 is connected to thedrain of the second switch transistor PM2. A source of the N-typetransistor NM0 is connected to a ground voltage. A gate of the N-typetransistor NM0 is used to receive a control signal VB.

The global current source circuit 46 is used to form a current mirrorwith each of the plurality of pulling circuits 42. The image sensor 400is arranged with only one global current source circuit 46. For example,the image sensor 400 further includes a multiplexer or multipleswitching devices to allow the global current source circuit 46 to becoupled to different pulling circuits 42 via the multiplexer ordifferent switching devices. The global current source circuit 46includes an N-type transistor whose drain and gate are connectedtogether and connected to a global current source. A source of theN-type transistor is connected to the ground voltage.

Each of the plurality of counters 43 is coupled to one pixel circuitcolumn for counting photon events in the output voltage from each pixelcircuit 411 of the coupled pixel circuit column.

Referring to FIGS. 5 and 6, FIG. 5 is an operational timing diagram ofan image sensor 400 according to a second embodiment of the presentdisclosure; and FIG. 6 is a flow chart of an image sensor 400 accordingto a second embodiment of the present disclosure. The operating methodof the image sensor 400 includes: turning on a resistive transistor by afixed voltage signal at a first time (Step S61); turning on a firstswitch transistor and a second switch transistor by an exposure signalat a second time to cause an avalanche diode to enter a detecting state(Step S63); and turning on a pull up transistor by an avalanche currentgenerated by the avalanche diode when receiving a photon to generate apositive pulse on a drain of the second switch transistor as a photonevent of an output voltage (Step S65).

Referring to FIGS. 4 to 6 together, details of this operating method areillustrated below. Although this operating method illustrates theoperation of one pixel circuit 411, it is appreciated that every pixelcircuit 411 in the same pixel circuit column has an operation identicalto FIGS. 5 and 6 only occurring at a different time based on the rowselection signal.

Step S61: At a first time t1, the fixed voltage signal VQ is switched toa low voltage level to turn on the resistive transistor PM1 of a pixelcircuit 411. Meanwhile, as the first switch transistor PM0 is not turnedon yet, a voltage drop is not generated on the resistive transistor PM1.At the first time t1, the control signal VB is switched to a highvoltage level to turn on the N-type transistor of the pulling circuit 42(now the pulling circuit 42 being coupled to the corresponding pixelcircuit 411 via a switching device or multiplexer).

Step S63: At a second time t2, the exposure signal RS is switched to alow voltage level to turn on the first switch transistor PM0 and thesecond switch transistor PM2 together. In the second embodiment, a lowlevel interval of the exposure signal RS is referred to an exposureperiod within which each photon event is counted by the column counter43. After the first switch transistor PM0 is conducted, as the resistivetransistor PM1 has been turned on at the first time t1, a voltage on thenode SN is pulled up to a high voltage level. In the second embodiment,the first time t1 is prior to the second time t2 by a predeterminedinterval as a setting interval of the resistive transistor PM1. Inaddition, during an interval between the second time t2 and the time t3,although the second switch transistor PM2 is conducted, the outputvoltage is still kept at a low voltage level because the pull uptransistor PM3 is not turned on yet.

Step S65: Within the exposure period, the SPAD is in the detecting statewhen the avalanche diode SPAD does not receive any photon (e.g., aninterval between t2 and t3 in FIG. 5), wherein the voltage on the nodeSN and the output voltage are respectively kept at a high voltage leveland a low voltage level. When the avalanche diode SPAD receives a photon(e.g., at time t3 in FIG. 5), the avalanche diode SPAD generates anavalanche current Ia flowing through the resistive transistor PM1 toform a voltage drop thereon to cause the voltage on the node SN tochange to a low voltage level to turn on the pull up transistor PM3.Meanwhile, the drain of the second switch transistor NM2 is connected tothe system voltage VDD via the second switch transistor PM2 and the pullup transistor PM3 to cause the output voltage to generate a positivepulse as a photon event of the output voltage. Meanwhile, as the voltageon the node SN is changed to a low voltage level to cause the voltagedifference between the cathode and the anode of the avalanche diode SPADto be smaller than the breakdown voltage, the quenching is started.

Next, the voltage on the node SN starts to be charged at time t4 via thepull up transistor PM3, and the pull up transistor PM3 is automaticallyturned off (e.g., at time t5 in FIG. 5) after a charge interval, and theavalanche diode SPAD returns to a detecting state, wherein said chargeinterval is determined according to the resistance of the resistivetransistor PM1 and the stray capacitance of the circuit. As mentionedabove, said resistance of the resistive transistor PM1 and the straycapacitance are determined in a circuit design stage so as to determinea time interval of the avalanche diode SPAD returning to the detectingstate.

Finally, after the pull up transistor PM3 is automatically turned off,the pulling circuit 42 pulls down the output voltage back to a lowvoltage level to return to an original level at time t6. In this way,one quenching and reading cycle is accomplished.

During an exposure period, corresponding to each incident photon, theoperation of the pixel circuit 411 repeats the process from the firsttime t1 to time t6 in FIG. 6. For example, the counter 43 counts fourpositive pulses as the detection result within the exposure period inFIG. 5.

Although the first and second embodiments mentioned above are describedin the way that each pixel circuit includes four transistors, thepresent disclosure is not limited thereto. Referring to FIGS. 7 and 8,FIG. 7 is a schematic diagram of an image sensor 100 according to athird embodiment of the present disclosure; and FIG. 8 is an operationaltiming diagram of an image sensor 100 according to a third embodiment ofthe present disclosure.

In the third embodiment, the image sensor 100 also includes a pixelarray 11, a plurality of pulling circuits 12, a plurality of counters13, a row decoder 14, a column decoder 15 and a global current sourcecircuit 16. The pixel array 11 also includes a plurality of pixelcircuits 111.

Each pixel circuit 111 includes an avalanche diode SPAD and at least atransistor NM3. A cathode of SPAD is connected to a positive biasvoltage VA, e.g., +15V, but not limited to. An anode of SPAD isconnected to a node SN that connects to a gate of the transistor NM3.Each of the plurality of pulling circuits 12 is configured to be coupledto a drain of the transistor NM3 of each pixel circuit 111 of one pixelcircuit column via a readout line Rd.

Furthermore, to control the pixel circuit 111 in one pixel circuitcolumn to detect a photo event sequentially, each pixel circuit 111further includes another transistor NM2 connected between the transistorNM3 and the readout line Rd. Operations of the image sensor 100 is shownin FIG. 8 and similar to that of the first embodiment, only without thetransistors NM1 and NM0, and thus details thereof are not repeatedherein. Functions of the plurality of pulling circuits 12, the pluralityof counters 13, the row decoder 14, the column decoder 15 and the globalcurrent source circuit 16 are identical to those of the firstembodiment.

It is appreciated that numbers mentioned in the above embodiment, suchas the pixel number and pulse number are only intended to illustrate butnot to limit the present disclosure.

In addition, the high and low voltage levels mentioned in the aboveembodiments are selected properly without particular limitations as longas every element operates normally. Meanwhile, the fixed voltage valueVQ is referred to a voltage value thereof is maintained constant duringthe exposure period.

The present disclosure further provides other embodiments of an imagesensor having high fill factor, wherein multiple pixel circuits atadjacent rows in each column share the same output circuit (includingthe above resistive transistor, the second switch transistor and thepull up/down transistor) in order to further increase the fill factor.

To simplify the descriptions, elements below identical to the aboveembodiments are indicated by identical reference numerals.

Please referring to FIG. 9, it is a schematic diagram of an image sensor100′ according to a fourth embodiment of the present disclosure. FIG. 9shows that two pixel circuits at adjacent rows (called pixel circuitgroup herein) in each column of the pixel array 11 shares one outputcircuit, but the sharing of the present disclosure is not limited to twopixel circuit rows. In FIG. 9, the pulling circuits 12, the counters 13,the row decoder 14, the column decoder 15 and the global current sourcecircuit 16 are identical to those shown in FIG. 1 and have beendescribed above, and thus details thereof are not repeated herein.

The transistors in the pixel circuits of the fourth embodiment areN-type transistors as shown in FIG. 9.

Each column of the pixel array 11 includes multiple pixel circuitgroups, and each pixel circuit group (e.g., 1111 and 1112 shown in FIG.9) includes a first avalanche photodiode SPAD1, a first switchtransistor NM0, a resistive transistor NM1, a second switch transistorNM2, a pull down transistor NM3, a second avalanche photodiode SPAD2 anda third switch transistor NM0′. The SPAD1 and the first switchtransistor NM0 are arranged in a first pixel circuit 1111, and the SPAD2and the third switch transistor NM0′ are arranged in a second pixelcircuit 1112, wherein the first pixel circuit 1111 and the second pixelcircuit 1112 are adjacent to each other. The resistive transistor NM1,the second switch transistor NM2 and the pull down transistor NM3 forman output circuit that is arranged inside the first pixel circuit 1111,inside the second pixel circuit 1112 or between or outside the firstpixel circuit 1111 and the second pixel circuit 1112 without particularlimitations.

The first avalanche diode SPAD1 has an anode and a cathode, and thecathode thereof is connected to a positive bias voltage VA. A drain ofthe first switch transistor NM0 is connected to the anode of the SPAD1,a gate of the first switch transistor NM0 is used to receive a firstexposure signal RS1, and a source of the first switch transistor NM0 isconnected to a node SN.

The second avalanche diode SPAD2 has an anode and a cathode, and thecathode thereof is connected to the positive bias voltage VA. A drain ofthe third switch transistor NM0′ is connected to the anode of the SPAD2,a gate of the third switch transistor NM0′ is used to receive a secondexposure signal RS2, and a source of the third switch transistor NM0′ isconnected to the node SN.

A drain of the resistive transistor NM1 is connected to the node SN, agate of the resistive transistor NM1 is used to receive a fixed voltagesignal VQ, and a source of the resistive transistor NM1 is connected toa ground voltage. A gate of the pull down transistor NM3 is connected tothe node SN, and a source of the pull down transistor NM3 is connectedto the ground voltage. A gate of the second switch transistor NM2 isused to receive the first exposure signal RS1 or the second exposuresignal RS2 (e.g., corresponding to the exposure period of differentrows), a source of the second switch transistor NM2 is connected to adrain of the pull down transistor NM3, and a drain of the second switchtransistor NM2 is used to generate a first output voltage or a secondoutput voltage (e.g., corresponding to the exposure period of differentrows).

Each of the plurality of pulling circuits 12 is used to be coupled tothe drain of the second switch transistor NM2 of each pixel circuitgroup of one column of pixel circuit groups via a readout line Rd toread the first output voltage or the second output voltage.

In this embodiment, the first exposure signal RS1 and the secondexposure signal RS2 are row selection signals (e.g., generated by therow decoder 14) to sequentially activate an exposure period. Forexample, the first exposure signal RS1 is used to activate a first pixelcircuit row and the second exposure signal RS2 is used to activate asecond pixel circuit row.

During an interval that the first exposure signal RS1 activates thefirst pixel circuit row, operations of the SPAD1 and the first switchtransistor NM0 of the first pixel circuit 1111 as well as the resistivetransistor NM1, the second switch transistor NM2 and the pull downtransistor NM3 of the output circuit are identical to FIG. 1 and basedon the signal timing diagram of FIG. 2, and the output signal generatedwithin this interval is referred to a first output voltage.

During an interval that the second exposure signal RS2 activates thesecond pixel circuit row, operations of the SPAD2 (replacing the SPAD1in descriptions of FIG. 2) and the third switch transistor NM0′(replacing the NM0 in descriptions of FIG. 2) of the second pixelcircuit 1112 as well as the resistive transistor NM1, the second switchtransistor NM2 and the pull down transistor NM3 of the output circuitare identical to FIG. 1 and based on the signal timing diagram of FIG.2, and the output signal generated within this interval is referred to asecond output voltage.

The structure and operation of every pixel circuit group of each pixelcircuit column are identical to 1111 and 1112.

In an aspect that one pixel circuit group includes three or more thanthree pixel circuits, each pixel circuit includes an avalanche diode anda first switch transistor, and multiple pixel circuits shares the sameoutput circuit. The output circuit is arranged in one of the multiplepixel circuits or outside the multiple pixel circuits.

For example referring to FIG. 10, it is a schematic diagram of an imagesensor 100″ according to a fifth embodiment of the present disclosure.In the fifth embodiment, the pixel array 11 includes a plurality ofpixel circuits (e.g., shown as 1111′ and 1112) arranged in a matrix, andeach of a plurality of output circuits 111S is coupled to one pixelcircuit column via a readout line Rd and coupled to one pulling circuit12 and one counter 13.

In FIG. 10, the pulling circuits 12, the counters 13, the row decoder14, the column decoder 15 and the global current source circuit 16 areidentical to those shown in FIG. 1 and have been described above, andthus details thereof are not repeated herein.

The transistors in the pixel circuits in the fifth embodiment are N-typetransistors as shown in FIG. 10.

Each of the plurality of pixel circuits includes an avalanche diode anda select switch transistor (functioning identical to the first switchtransistor in FIG. 1). For example, the first pixel circuit 1111′includes an avalanche diode SPAD1 and a select switch transistor NM0;and the second pixel circuit 1112 includes an avalanche diode SPAD2 anda select switch transistor NM0′; and so on.

The avalanche diodes SPAD1 and SPAD2 respectively have an anode and acathode, and the cathode thereof is connected to a positive bias voltageVA. Drains of the select switch transistors NM0 and NM0′ arerespectively connected to the anodes of the avalanche diodes SPAD1 andSPAD2, gates of the select switch transistors NM0 and NM0′ arerespectively used to receive an exposure signal RS1 and RS2, and sourcesof the select switch transistors NM0 and NM0′ are connected to a node SNvia a readout line Rd. In one aspect, the readout line Rd within thepixel array 11 is used to transmit a voltage on the node SN to acorresponding output circuit 111S rather than transmitting the outputvoltage.

The plurality of output circuits 111S is selected to be arranged outsidethe pixel array 11, e.g., between the pixel array 11 and the pullingcircuits 12. Each of the plurality of output circuits 111S includes aresistive transistor NM1, a pull down transistor NM3 and a second switchtransistor NM2.

A drain of the resistive transistor NM1 is connected to the node SN, agate of the resistive transistor NM1 is used to receive a fixed voltagesignal VQ, and a source of the resistive transistor NM1 is connected toa ground voltage. A gate of the pull down transistor NM3 is connected tothe node SN, and a source of the pull down transistor NM3 is connectedto the ground voltage. A gate of the second switch transistor NM2 isused to sequentially (e.g., corresponding to exposure periods ofdifferent pixel circuit rows) receive an exposure signal RS1, RS2 . . .RSN (e.g., N being a number of rows of the pixel array 11), a source ofthe second switch transistor NM2 is connected to a drain of the pulldown transistor NM3, and a drain of the second switch transistor NM2 isused to sequentially generate an output voltage corresponding toexposure periods of different pixel circuit rows.

Each of a plurality of pulling circuits 12 is used to be coupled to thedrain of the second switch transistor NM2 of one of the plurality ofoutput circuits 111S to sequentially read the output voltagecorresponding to exposure periods of different pixel circuit rows.

In this embodiment, the exposure signals RS1, RS2 . . . RSN are rowselection signals (e.g., generated by the row decoder 14) tosequentially activate an exposure period corresponding different pixelcircuit rows. For example, the first exposure signal RS1 is used toactivate a first pixel circuit row; the second exposure signal RS2 isused to activate a second pixel circuit row; . . . ; and the exposuresignal RSN is used to activate a last pixel circuit row.

During the first exposure signal RS1 activating the first pixel circuitrow, operations of the SPAD1 and the select switch transistor NM0 of thefirst pixel circuit 1111′ as well as the resistive transistor NM1, thesecond switch transistor NM2 and the pull down transistor NM3 of theoutput circuit 111S are identical to FIG. 1 and based on the signaltiming diagram of FIG. 2. Within the exposure period of the first pixelcircuit row, the output signal generated by the output circuit 111S isreferred to a first output voltage.

During the second exposure signal RS2 activating the second pixelcircuit row, operations of the SPAD2 (replacing the SPAD1 indescriptions of FIG. 2) and the select switch transistor NM0′ (replacingthe NM0 in descriptions of FIG. 2) of the second pixel circuit 1112 aswell as the resistive transistor NM1, the second switch transistor NM2and the pull down transistor NM3 of the output circuit 111S areidentical to FIG. 1 and based on the signal timing diagram of FIG. 2.Within the exposure period of the second pixel circuit row, the outputsignal generated by the output circuit 111S is referred to a secondoutput voltage.

The operations of other pixel circuits are similar to the above firstand second pixel circuits 1111′ and 1112, and thus are not repeatedherein.

More specifically, the operation of every pixel circuit at each pixelcircuit column is performed by the avalanche diode and the select switchtransistor thereof in conjunction with the resistive transistor NM1, thesecond switch transistor NM2 and the pull down transistor NM3 of theoutput circuit 111S. Each output circuit 111S generates an outputvoltage within the exposure period of each pixel circuit for thecorresponding counter 13 to count photon events.

Each of the pulling circuits 12 is used to pull up the first outputvoltage or the second output voltage after a photon event of the firstoutput voltage or the second output voltage is read.

Please referring to FIG. 11, it is a schematic diagram of an imagesensor 400′ according to a sixth embodiment of the present disclosure.FIG. 11 shows that two pixel circuits at adjacent rows (called pixelcircuit group herein) in each column of the pixel array 41 shares oneoutput circuit, but the sharing of the present disclosure is not limitedto two pixel circuit rows. In FIG. 11, the pulling circuits 42, thecounters 43, the row decoder 44, the column decoder 45 and the globalcurrent source circuit 46 are identical to those shown in FIG. 4 andhave been described above, and thus details thereof are not repeatedherein.

The transistors in the pixel circuits of the sixth embodiment are P-typetransistors as shown in FIG. 11.

Each column of the pixel array 41 includes multiple pixel circuitgroups, and each pixel circuit group (e.g., 4111 and 4112 shown in FIG.11) includes a first avalanche photodiode SPAD1, a first switchtransistor PM0, a resistive transistor PM1, a second switch transistorPM2, a pull up transistor PM3, a second avalanche photodiode SPAD2 and athird switch transistor PM0′. The SPAD1 and the first switch transistorPM0 are arranged in a first pixel circuit 4111, and the SPAD2 and thethird switch transistor PM0′ are arranged in a second pixel circuit4112, wherein the first pixel circuit 4111 and the second pixel circuit4112 are adjacent to each other. The resistive transistor PM1, thesecond switch transistor PM2 and the pull up transistor PM3 form anoutput circuit that is arranged inside the first pixel circuit 4111,inside the second pixel circuit 4112 or between or outside the firstpixel circuit 4111 and the second pixel circuit 4112 without particularlimitations.

The first avalanche diode SPAD1 has an anode and a cathode, and theanode thereof is connected to a negative bias voltage −VA. A drain ofthe first switch transistor PM0 is connected to the cathode of theSPAD1, a gate of the first switch transistor PM0 is used to receive afirst exposure signal RS1, and a source of the first switch transistorPM0 is connected to a node SN.

The second avalanche diode SPAD2 has an anode and a cathode, and theanode thereof is connected to the negative bias voltage −VA. A drain ofthe third switch transistor PM0′ is connected to the cathode of theSPAD2, a gate of the third switch transistor PM0′ is used to receive asecond exposure signal RS2, and a source of the third switch transistorPM0′ is connected to the node SN.

A drain of the resistive transistor PM1 is connected to the node SN, agate of the resistive transistor PM1 is used to receive a fixed voltagesignal VQ, and a source of the resistive transistor PM1 is connected toa system voltage VDD. A gate of the pull up transistor PM3 is connectedto the node SN, and a source of the pull up transistor PM3 is connectedto the system voltage VDD. A gate of the second switch transistor PM2 isused to receive the first exposure signal RS1 or the second exposuresignal RS2 (e.g., corresponding to the exposure period of differentrows), a source of the second switch transistor PM2 is connected to adrain of the pull up transistor PM3, and a drain of the second switchtransistor PM2 is used to generate a first output voltage or a secondoutput voltage (e.g., corresponding to the exposure period of differentrows).

Each of the plurality of pulling circuits 42 is used to be coupled tothe drain of the second switch transistor PM2 of each pixel circuitgroup of one column of pixel circuit groups via a readout line Rd toread the first output voltage or the second output voltage.

In this embodiment, the first exposure signal RS1 and the secondexposure signal RS2 are row selection signals (e.g., generated by therow decoder 44) to sequentially activate an exposure period. Forexample, the first exposure signal RS1 is used to activate a first pixelcircuit row and the second exposure signal RS2 is used to activate asecond pixel circuit row.

During an interval that the first exposure signal RS1 activates thefirst pixel circuit row, operations of the SPAD1 and the first switchtransistor PM0 of the first pixel circuit 4111 as well as the resistivetransistor PM1, the second switch transistor PM2 and the pull uptransistor PM3 of the output circuit are identical to FIG. 4 and basedon the signal timing diagram of FIG. 5, and the output signal generatedwithin this interval is referred to a first output voltage.

During an interval that the second exposure signal RS2 activates thesecond pixel circuit row, operations of the SPAD2 (replacing the SPAD1in descriptions of FIG. 5) and the third switch transistor PM0′(replacing the NM0 in descriptions of FIG. 5) of the second pixelcircuit 4112 as well as the resistive transistor PM1, the second switchtransistor PM2 and the pull up transistor PM3 of the output circuit areidentical to FIG. 4 and based on the signal timing diagram of FIG. 5,and the output signal generated within this interval is referred to asecond output voltage.

The structure and operation of every pixel circuit group of each pixelcircuit column are identical to 4111 and 4112.

In an aspect that one pixel circuit group includes three or more thanthree pixel circuits, each pixel circuit includes an avalanche diode anda first switch transistor, and multiple pixel circuits shares the sameoutput circuit. The output circuit is arranged in one of the multiplepixel circuits or outside the multiple pixel circuits.

For example referring to FIG. 12, it is a schematic diagram of an imagesensor 400″ according to a seventh embodiment of the present disclosure.In the seventh embodiment, the pixel array 41 includes a plurality ofpixel circuits (e.g., shown as 4111′ and 4112) arranged in a matrix, andeach of a plurality of output circuits 411S is coupled to one pixelcircuit column via a readout line Rd and coupled to one pulling circuit42 and one counter 43.

In FIG. 12, the pulling circuits 42, the counters 43, the row decoder44, the column decoder 45 and the global current source circuit 46 areidentical to those shown in FIG. 4 and have been described above, andthus details thereof are not repeated herein.

The transistors in the pixel circuits in the seventh embodiment areP-type transistors as shown in FIG. 12.

Each of the plurality of pixel circuits includes an avalanche diode anda select switch transistor (functioning identical to the first switchtransistor in FIG. 4). For example, the first pixel circuit 4111′includes an avalanche diode SPAD1 and a select switch transistor PM0;and the second pixel circuit 4112 includes an avalanche diode SPAD2 anda select switch transistor PM0′; and so on.

The avalanche diodes SPAD1 and SPAD2 respectively have an anode and acathode, and the anode thereof is connected to a negative bias voltage−VA. Drains of the select switch transistors PM0 and PM0′ arerespectively connected to the cathodes of the avalanche diodes SPAD1 andSPAD2, gates of the select switch transistors NM0 and NM0′ arerespectively used to receive an exposure signal RS1 and RS2, and sourcesof the select switch transistors NM0 and NM0′ are connected to a node SNvia a readout line Rd. In one aspect, the readout line Rd within thepixel array 41 is used to transmit a voltage on the node SN to acorresponding output circuit 411S rather than transmitting the outputvoltage.

The plurality of output circuits 411S is selected to be arranged outsidethe pixel array 41, e.g., between the pixel array 41 and the pullingcircuits 42. Each of the plurality of output circuits 411S includes aresistive transistor PM1, a pull up transistor PM3 and a second switchtransistor PM2.

A drain of the resistive transistor PM1 is connected to the node SN, agate of the resistive transistor PM1 is used to receive a fixed voltagesignal VQ, and a source of the resistive transistor PM1 is connected toa system voltage VDD. A gate of the pull up transistor PM3 is connectedto the node SN, and a source of the pull up transistor PM3 is connectedto the system voltage VDD. A gate of the second switch transistor PM2 isused to sequentially (e.g., corresponding to exposure periods ofdifferent pixel circuit rows) receive an exposure signal RS1, RS2 . . .RSN (e.g., N being a number of rows of the pixel array 41), a source ofthe second switch transistor PM2 is connected to a drain of the pull uptransistor PM3, and a drain of the second switch transistor PM2 is usedto sequentially generate an output voltage corresponding to exposureperiods of different pixel circuit rows.

Each of a plurality of pulling circuits 42 is used to be coupled to thedrain of the second switch transistor PM2 of one of the plurality ofoutput circuits 411S to sequentially read the output voltagecorresponding to exposure periods of different pixel circuit rows.

In this embodiment, the exposure signals RS1, RS2 . . . RSN are rowselection signals (e.g., generated by the row decoder 44) tosequentially activate an exposure period corresponding different pixelcircuit rows. For example, the first exposure signal RS1 is used toactivate a first pixel circuit row; the second exposure signal RS2 isused to activate a second pixel circuit row; . . . ; and the exposuresignal RSN is used to activate a last pixel circuit row.

During the first exposure signal RS1 activating the first pixel circuitrow, operations of the SPAD1 and the select switch transistor PM0 of thefirst pixel circuit 4111′ as well as the resistive transistor PM1, thesecond switch transistor PM2 and the pull up transistor PM3 of theoutput circuit 411S are identical to FIG. 4 and based on the signaltiming diagram of FIG. 5. Within the exposure period of the first pixelcircuit row, the output signal generated by the output circuit 411S isreferred to a first output voltage.

During the second exposure signal RS2 activating the second pixelcircuit row, operations of the SPAD2 (replacing the SPAD1 indescriptions of FIG. 5) and the select switch transistor PM0′ (replacingthe PM0 in descriptions of FIG. 5) of the second pixel circuit 4112 aswell as the resistive transistor PM1, the second switch transistor PM2and the pull up transistor PM3 of the output circuit 411S are identicalto FIG. 4 and based on the signal timing diagram of FIG. 5. Within theexposure period of the second pixel circuit row, the output signalgenerated by the output circuit 411S is referred to a second outputvoltage.

The operations of other pixel circuits are similar to the above firstand second pixel circuits 4111′ and 4112, and thus are not repeatedherein.

More specifically, the operation of every pixel circuit at each pixelcircuit column is performed by the avalanche diode and the select switchtransistor thereof in conjunction with the resistive transistor PM1, thesecond switch transistor PM2 and the pull up transistor PM3 of theoutput circuit 411S. Each output circuit 411S generates an outputvoltage within the exposure period of each pixel circuit for thecorresponding counter 13 to count the photon event.

Each of the pulling circuits 42 is used to pull down the first outputvoltage or the second output voltage after a photon event of the firstoutput voltage or the second output voltage is read.

As mentioned above, although the SPAD can be used to detect extremelyweak light and high frequency signals, it still needs to operate incorporation with the quenching circuit. Poor circuit design caninfluence the minimum pixel size and fill factor. Accordingly, thepresent disclosure further provides an image sensor, the quenching andreadout circuit thereof (e.g., FIGS. 1 and 4) and an operating method ofthe image sensor (e.g., FIGS. 2-3 and 5-6) that have simple circuitstructure, low pixel size limitation and high fill factor.

Although the disclosure has been explained in relation to its preferredembodiment, it is not used to limit the disclosure. It is to beunderstood that many other possible modifications and variations can bemade by those skilled in the art without departing from the spirit andscope of the disclosure as hereinafter claimed.

What is claimed is:
 1. An image sensor, comprising: a pixel arraycomprising a plurality of pixel circuits arranged in a matrix, eachcolumn of the pixel array having multiple pixel circuit groups and eachpixel circuit group comprising: a first avalanche diode having an anodeand a cathode, the cathode thereof being connected to a positive biasvoltage; a first switch transistor, a drain of the first switchtransistor connected to the anode of the first avalanche diode, a gateof the first switch transistor configured to receive a first exposuresignal, and a source of the first switch transistor connected to a node;a resistive transistor, a drain of the resistive transistor connected tothe node, a gate of the resistive transistor configured to receive afixed voltage signal, and a source of the resistive transistor connectedto a ground voltage; a pull down transistor, a gate of the pull downtransistor connected to the node, and a source of the pull downtransistor connected to the ground voltage; a second avalanche diodehaving an anode and a cathode, the cathode thereof being connected tothe positive bias voltage; a third switch transistor, a drain of thethird switch transistor connected to the anode of the second avalanchediode, a gate of the third switch transistor configured to receive asecond exposure signal, and a source of the third switch transistorconnected to the node; and a second switch transistor, a gate of thesecond switch transistor configured to receive the first exposure signalor the second exposure signal, a source of the second switch transistorconnected to a drain of the pull down transistor, and a drain of thesecond switch transistor configured to generate a first output voltageor a second output voltage; and a plurality of pulling circuits eachbeing configured to be coupled to the drain of the second switchtransistor of each pixel circuit group of one column of pixel circuitgroups via a readout line to read the first output voltage or the secondoutput voltage.
 2. The image sensor as claimed in claim 1, wherein eachof the pulling circuits comprises a P-type transistor configured to pullup the first output voltage or the second output voltage after a photonevent of the first output voltage or the second output voltage is read,and a drain of the P-type transistor is connected to the drain of thesecond switch transistor, and the resistive transistor, the first switchtransistor, the pull down transistor, the second switch transistor andthe third switch transistor are N-type transistors.
 3. The image sensoras claimed in claim 1, further comprising a global current sourcecircuit configured to form a current mirror with each of the pullingcircuits.
 4. The image sensor as claimed in claim 1, further comprisinga plurality of counters each being coupled to the one column of pixelcircuit groups and configured to count photon events of the first outputvoltage or the second output voltage.
 5. The image sensor as claimed inclaim 1, wherein the first exposure signal and the second exposuresignal are row selection signals to sequentially activate an exposureperiod, and the fixed voltage signal is configured to determineresistance of the resistive transistor.
 6. An image sensor, comprising:a pixel array comprising a plurality of pixel circuits arranged in amatrix, each of the pixel circuits comprising: an avalanche diode havingan anode and a cathode, the cathode thereof being connected to apositive bias voltage; and a select switch transistor, a drain of theselect switch transistor connected to the anode of the avalanche diode,a gate of the select switch transistor configured to receive an exposuresignal, and a source of the select switch transistor connected to a nodevia a readout line; a plurality of output circuits each configured to becoupled to one pixel circuit column respectively via the readout line,and comprising: a resistive transistor, a drain of the resistivetransistor connected to the node, a gate of the resistive transistorconfigured to receive a fixed voltage signal, and a source of theresistive transistor connected to a ground voltage; a pull downtransistor, a gate of the pull down transistor connected to the node,and a source of the pull down transistor connected to the groundvoltage; and a second switch transistor, a gate of the second switchtransistor configured to receive the exposure signal, a source of thesecond switch transistor connected to a drain of the pull downtransistor, and a drain of the second switch transistor configured togenerate an output voltage; and a plurality of pulling circuits eachbeing configured to be coupled to the drain of the second switchtransistor of one of the plurality of output circuits to read the outputvoltage.
 7. The image sensor as claimed in claim 6, wherein each of thepulling circuits comprises a P-type transistor configured to pull up theoutput voltage after a photon event of the output voltage is read, and adrain of the P-type transistor is connected to the drain of the secondswitch transistor, and the resistive transistor, the select switchtransistor, the pull down transistor and the second switch transistorare N-type transistors.
 8. The image sensor as claimed in claim 6,further comprising a global current source circuit configured to form acurrent mirror with each of the pulling circuits.
 9. The image sensor asclaimed in claim 6, further comprising a plurality of counters eachbeing coupled to the one pixel circuit column and configured to countphoton events of the output voltage.
 10. The image sensor as claimed inclaim 6, wherein the exposure signal is a row selection signal, and thefixed voltage signal is configured to determine resistance of theresistive transistor.
 11. An image sensor, comprising: a pixel arraycomprising a plurality of pixel circuits arranged in a matrix, eachcolumn of the pixel array having multiple pixel circuit groups and eachpixel circuit group comprising: a first avalanche diode having an anodeand a cathode, the anode thereof being connected to a negative biasvoltage; a first switch transistor, a drain of the first switchtransistor connected to the cathode of the first avalanche diode, a gateof the first switch transistor configured to receive a first exposuresignal, and a source of the first switch transistor connected to a node;a resistive transistor, a drain of the resistive transistor connected tothe node, and a gate of the resistive transistor configured to receive afixed voltage signal, and a source of the resistive transistor connectedto a system voltage; a pull up transistor, a gate of the pull uptransistor connected to the node, and a source of the pull up transistorconnected to the system voltage; a second avalanche diode having ananode and a cathode, the anode thereof being connected to the negativebias voltage; a third switch transistor, a drain of the third switchtransistor connected to the cathode of the second avalanche diode, agate of the third switch transistor configured to receive a secondexposure signal, and a source of the third switch transistor connectedto the node; and a second switch transistor, a gate of the second switchtransistor configured to receive the first exposure signal or the secondexposure signal, a source of the second switch transistor connected to adrain of the pull up transistor, and a drain of the second switchtransistor configured to generate a first output voltage or a secondoutput voltage; and a plurality of pulling circuits each beingconfigured to be coupled to the drain of the second switch transistor ofeach pixel circuit group of one column of pixel circuit groups via areadout line to read the first output voltage or the second outputvoltage.
 12. The image sensor as claimed in claim 11, wherein each ofthe pulling circuits comprises an N-type transistor configured to pulldown the first output voltage or the second output voltage after aphoton event of the first output voltage or the second output voltage isread, and a drain of the N-type transistor is connected to the drain ofthe second switch transistor, and the resistive transistor, the firstswitch transistor, the pull up transistor, the second switch transistorand the third switch transistor are P-type transistors.
 13. The imagesensor as claimed in claim 11, further comprising a global currentsource circuit configured to form a current mirror with each of thepulling circuits.
 14. The image sensor as claimed in claim 11, furthercomprising a plurality of counters each being coupled to the one columnof pixel circuit groups and configured to count photon events of thefirst output voltage or the second output voltage.
 15. The image sensoras claimed in claim 11, wherein the first exposure signal and the secondexposure signal are row selection signals to sequentially activate anexposure period, and the fixed voltage signal is configured to determineresistance of the resistive transistor.
 16. An image sensor, comprising:a pixel array comprising a plurality of pixel circuits arranged in amatrix, each of the pixel circuits comprising: an avalanche diode havingan anode and a cathode, the anode thereof being connected to a negativebias voltage; a select switch transistor, a drain of the select switchtransistor connected to the cathode of the avalanche diode, a gate ofthe select switch transistor configured to receive an exposure signal,and a source of the select switch transistor connected to a node via areadout line; a plurality of output circuits each configured to becoupled to one pixel circuit column respectively via the readout line,and comprising: a resistive transistor, a drain of the resistivetransistor connected to the node, and a gate of the resistive transistorconfigured to receive a fixed voltage signal, and a source of theresistive transistor connected to a system voltage; a pull uptransistor, a gate of the pull up transistor connected to the node, anda source of the pull up transistor connected to the system voltage; anda second switch transistor, a gate of the second switch transistorconfigured to receive the exposure signal, a source of the second switchtransistor connected to a drain of the pull up transistor, and a drainof the second switch transistor configured to generate an outputvoltage; and a plurality of pulling circuits each being configured to becoupled to the drain of the second switch transistor of one of theplurality of output circuits to read the output voltage.
 17. The imagesensor as claimed in claim 16, wherein each of the pulling circuitscomprises an N-type transistor configured to pull down the outputvoltage after a photon event of the output voltage is read, and a drainof the N-type transistor is connected to the drain of the second switchtransistor, and the resistive transistor, the select switch transistor,the pull up transistor and the second switch transistor are P-typetransistors.
 18. The image sensor as claimed in claim 16, furthercomprising a global current source circuit configured to form a currentmirror with each of the pulling circuits.
 19. The image sensor asclaimed in claim 16, further comprising a plurality of counters eachbeing coupled to the one pixel circuit column and configured to countphoton events of the output voltage.
 20. The image sensor as claimed inclaim 16, wherein the exposure signal is a row selection signal, and thefixed voltage signal is configured to determine resistance of theresistive transistor.